OPTIMISATION OF THE OPTICAL BAND GAP OF AEROSOL ASSISTED CHEMICAL VAPOUR DEPOSITED SnS THIN FILM SEMICONDUCTOR

Abstract

The conductivity of a SnS semiconductor is impacted by the electron trap connected to the grain boundary, which hinders the attainment of the threshold voltage necessary for transistor functioning. On glass substrates, SnS thin films with thicknesses ranging from 0.2 to 0.40 μm were formed using aerosol assisted chemical vapour deposition. Utilizing energy dispersive X-ray spectroscopy, profilometry, X-ray diffractometer, and scanning electron microscopy, the optical band gap properties, composition, and microstructure of the SnS thin film were assessed. It was discovered that the Sn and S elements in SnS thin films altered in composition as the films' thickness increased.  The increase in crystallites for thicker films may be the cause of the reduction in optical band gap with increasing film thickness. The SnS thin film’s energy band gap decrease as a result of an increase in crystalline nature brought on by an increase in adsorption atom mobility with thickness.